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2SD2536

Part Number	2SD2536
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2536 Switching Applications Micr...
Datasheet	2SD2536 PDF File

Overview

2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.
2 V (max) (IC = 0.
7 A, VBH = 4.
2 V) • Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 85 V Collector-emitter voltage VCEO 100 ± 15 V Emitter-base voltage VEBO 6 V Bias voltage VB 20 V Collector current IC 2 A Base current IB 0.
5 A JEDEC TO-92MOD Collector power dissipation PC 0.
9 W JEITA ― Juncti...

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