Power Transistors
2SD2530
Silicon NPN triple diffusion planer type Darlington
Unit: mm
4.2±0.2
For power amplification...
Power Transistors
2SD2530
Silicon NPN triple diffusion planer type Darlington
Unit: mm
4.2±0.2
For power amplification
13.0±0.2
10.0±0.2 1.0±0.2
5.0±0.1
I Features
High forward current transfer ratio hFE Allowing supply with the radial taping Low collector to emitter saturation
voltage VCE(sat): < 2.5 V
2.5±0.1
1.2±0.1 1.48±0.2
90°
C 1.0 2.25±0.2
18.0±0.5 Solder Dip
0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 100 100 5 10 5 15 2 150 −55 to +150 °C °C Unit V V V A A W
2.5±0.2
2.5±0.2 1 2 3
1: Base 2: Collector 3: Emitter MT-4 Package
Internal Connection
C B
Junction temperature Storage temperature
E
I Electrical Characteristics TC = 25°C ± 2°C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter
voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Collector to emitter saturation
voltage VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100 V, IE = 0 VCE = 80 V, IB = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 4 V, IC = 2 A VCE = 4 V, IC = 4 A IC = 2 A, IB = 2 mA IC = 4 A, IB = 16 mA Base to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time IC = 4 A, IB = 16 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 4 A,...