Power Transistors
2SD2528
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ...
Power Transistors
2SD2528
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
q q q
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 60 6 10 5 1 40 2.0 150 –55 to +150 Unit V V V A A A W ˚C ˚C
15.0±0.5
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5
2.6±0.1
0.55±0.15
1
2
1:Base 2:Collector 3:Emitter TO–220D Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage Forward current transfer ratio Collector to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE* VCE(sat) fT ton tstg tf Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A IC = 4A, IB = 0.1A VCE = 12V, IC = 0.4A, f = 10MHz IC = 4A, IB1 = 0.08A, IB2 = – 0.08A, VCC = 50V 30 0.4 2.0 0.6 60 500 2000 0.3 V MHz µs µs µs min typ max 100 100 Unit µA µA V
*h
FE
Rank classification
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