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2SD2526 Datasheet

Part Number 2SD2526
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2526 Datasheet2SD2526 Datasheet (PDF)

2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) · Complementary to 2SB1641 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base curren.

  2SD2526   2SD2526






Part Number 2SD2528
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2526 Datasheet2SD2528 Datasheet (PDF)

Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit: mm s Features q q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 10 5 1 40 2.0 150 –55 to +150 Unit V V V A A A W ˚C ˚C 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 s Absolute Maximum R.

  2SD2526   2SD2526







Part Number 2SD2527
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2526 Datasheet2SD2527 Datasheet (PDF)

Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm s Features q q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 8 4 1 40 2.0 150 –55 to +150 Unit V V V A A A W ˚C ˚C 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 s Absolute Max.

  2SD2526   2SD2526







Part Number 2SD2525
Manufacturers Toshiba
Logo Toshiba
Description Silicon NPN Triple Diffused Type Transistor
Datasheet 2SD2526 Datasheet2SD2525 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 (min) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 6 Base curren.

  2SD2526   2SD2526







Part Number 2SD2524
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Power Transistor
Datasheet 2SD2526 Datasheet2SD2524 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- :VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 5 V IC C.

  2SD2526   2SD2526







Silicon NPN Transistor

2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) · Complementary to 2SB1641 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 100 7 5 8 0.5 1.8 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit BASE COLLECTOR ≈ 5 kΩ ≈ 150 Ω EMITTER JEDEC ― JEITA ― TOSHIBA 2-10T1A Weight: 1.5 g (typ.) 1 2003-02-04 2SD2526 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) (1) VCE (sat) (2) VBE (sat) VCB = 100 V, IE = 0 VEB = 6 V, IC = 0 IC = 30 mA, IB = 0 VCE = 3 V, IC = 3 A VCE = 3 V, IC = 5 A IC = 3 A, IB = 6 mA IC = 5 A, IB = 20 mA IC = 3 A, IB = 6 mA Min ― ― 100 2000 1000 ― ― ― Typ. Max Unit ― 100 µA ― 2.5 mA ―― V ― 15000 ―― 1.1 1.5 1.3 2.5 V 1.7 2.5 V Turn-on time ton 20 µs Input Output ― 1.0 ― IB1 IB1 IB2.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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