Power Transistors
2SD2465, 2SD2465A
Silicon NPN epitaxial planar type
For low-voltage switching Complementary to 2SB160...
Power Transistors
2SD2465, 2SD2465A
Silicon NPN epitaxial planar type
For low-
voltage switching Complementary to 2SB1603
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Features
q q q
15.0±0.3
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD2465 2SD2465A 2SD2465 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 40 50 20 40 5 8 4 25 2 150 –55 to +150 Unit V
4.1±0.2 8.0±0.2 Solder Dip
3.0±0.2
Low collector to emitter saturation
voltage VCE(sat) High-speed switching Full-pack package superior in insulation, which can be installed to the heat sink with one screw
13.7–0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1
emitter
voltage 2SD2465A Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
7°
1 2 3
1:Base 2:Collector 3:Emitter TO–220E Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SD2465 2SD2465A 2SD2465 2SD2465A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 5V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 20V 120 0.2 0.5 0.1 20 40 45 90 260 0.5 1.5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA V
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