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2SD2460 Datasheet

Part Number 2SD2460
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2460 Datasheet2SD2460 Datasheet (PDF)

Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 4.0±0.2 s Features q q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 20 20 15 1.5 0.7 300 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Emitter 2:Colle.

  2SD2460   2SD2460






Part Number 2SD2469A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2460 Datasheet2SD2469A Datasheet (PDF)

Power Transistors 2SD2469, 2SD2469A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1607 Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 150 80 100 7 15 7 40 2 150 –5.

  2SD2460   2SD2460







Part Number 2SD2469
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP Transistor
Datasheet 2SD2460 Datasheet2SD2469 Datasheet (PDF)

Power Transistors 2SD2469, 2SD2469A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1607 Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 150 80 100 7 15 7 40 2 150 –5.

  2SD2460   2SD2460







Part Number 2SD2469
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2460 Datasheet2SD2469 Datasheet (PDF)

Power Transistors 2SD2469, 2SD2469A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1607 Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 150 80 100 7 15 7 40 2 150 –5.

  2SD2460   2SD2460







Part Number 2SD2468
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2460 Datasheet2SD2468 Datasheet (PDF)

Power Transistors 2SD2468 Silicon NPN epitaxial planar type For power switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 80 7 8 4 35 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 15.0±0..

  2SD2460   2SD2460







Part Number 2SD2467
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2460 Datasheet2SD2467 Datasheet (PDF)

Power Transistors 2SD2467 Silicon NPN epitaxial planar type For power switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 80 7 6 3 30 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 15.0±0..

  2SD2460   2SD2460







Silicon NPN Transistor

Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 4.0±0.2 s Features q q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 20 20 15 1.5 0.7 300 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA* IC = 500mA, IB = 50mA* VCB = 20V, IE = –20mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 20 20 15 1000 0.15 55 10 * min typ max 1 10 2.0±0.2 marking +0.2 0.45–0.1 15.6±0.5 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 3.0±0.2 Unit µA µA V V V 2500 0.4 V MHz 15 pF Pulse measurement 1 Transistor PC — Ta 500 240 Ta=25˚C 200 2SD2460 IC — VCE Collector to emitter saturation volta.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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