Transistor
2SD2457
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q q q
...
Transistor
2SD2457
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q q q
4.5±0.1 1.6±0.2
1.5±0.1
1.0–0.2
+0.1
High collector to emitter
voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.6±0.1
0.4max.
45°
0.4±0.08 0.5±0.08 1.5±0.1
4.0–0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
3.0±0.15
(Ta=25˚C)
Ratings 50 40 5 3 1.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
3
2
1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
marking
EIAJ:SC–62 Mini Power Type Package
Marking symbol : 1Y
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base
voltage Collector to emitter
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Collector output capacitance
*1h FE Rank classification
(Ta=25˚C)
Symbol ICBO ICEO IEBO VCBO VCEO hFE*1 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 VEB = 5V, IE = 0 IC = 1mA, IE =...
