TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2440
Switching Application
2SD2440
Unit: mm
· High breakdown vo...
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2440
Switching Application
2SD2440
Unit: mm
· High breakdown
voltage: VCBO = 100 V : VEBO = 18 V
· Low saturation
voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A) · High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A) · High DC current gain: hFE = 200 (min) (VCE = 5 V, IC = 0.5 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
100 60 18 6 12 2
40
150 −55 to 150
Unit V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
1 2003-02-04
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage
DC current gain
Collector-emitter saturation
voltage Base-emitter saturation
voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 100 V, IE = 0
ICER
VCE = 80 V, RBE = 50 Ω
IEBO
VEB = 15 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1) (Note)
VCE = 5 V, IC = 0.5 A
hFE (2) VCE (sat) VBE (sat)
fT Cob
VCE = 5 V, IC = 5 A IC = 5 A, IB = 1 A IC = 5 A, IB = 1 A VCE = 10 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
ton
20 µs Input IB1
Output
IB1 IB2
10 Ω
Switching time Storage time Fa...