isc
Silicon NPN Darlington
Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 7A, VCE= 4V) ·Low Collector Saturation
Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7m...