2SD2394
Transistors
For Power Amplification (60V, 3A)
2SD2394
zStructure NPN Silicon Triple Diffused Planar Transistor
...
2SD2394
Transistors
For Power Amplification (60V, 3A)
2SD2394
zStructure NPN Silicon Triple Diffused Planar Transistor
www.DataSheet4U.com
zExternal dimensions (Unit : mm)
TO-220FN
10.0
4.5
φ3.2
2.8
14.0
zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA.
(1)Base (2)Collector (3)Emitter
15.0
12.0
8.0 5.0
1.2
1.3
0.8 2.54
(1) (2) (3)
2.54
0.75
2.6
zApplications Low frequency amplifier
zComplements
PNP 2SB1565 NPN 2SD2394
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 80 60 7 3 6 2 25 150 −55 to +150 Unit V V V A(DC) A(Pulse)∗1 W(Ta=25°C) W(Tc=25°C) °C °C
zPackaging specifications and hFE
Package Type hFE 2SD2394 EF Code Basic ordering unit (pieces) Taping − 500
hFE values are classified as follows:
Item hFE E 100 to 200 F 160 to 320
Collector power dissipation Junction temperature Storage temperature
∗1 Pw=100ms, single pulse
zElectrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown
voltage Collector-base breakdown
voltage Emitter-base breakdown
voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation
voltage Base-emitter saturation
voltage DC current gain Transition frequency Collector output capacitance
∗1 Pulse test
Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob
Min. Typ. Max. Unit 60 80 7 − − − ...
