2SD2391

2SD2391 Middle Power Transistor (60V / 2A) Datasheet lOutline Parameter Value r VCEO 60V o IC 2A d f lFeatures e 1)Low saturation voltage, tipically 　VCE(sat)=130mV at IC/IB=1A/50mA. d 2)Collector-emitter voltage=60V n s 3)PD=2W (Mounted on a ceramic board e n (40×40×0.7mm) ). 4)Complementary PNP Types : 2SB1561. 　 SOT-89 　 　 SC-62 　 　 　 MPT3 　 lInner circuit mm esig lApplication o LOW FREQUENCY AMPLIFIER ec D lPackaging specifications R ew Part No. Package Not N 2SD2391 SOT-89 (MPT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 4540 T100 180 12 1000 DT 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20160804 - Rev.003 2SD2391 　 　 　 　　 　 　 　 　 　 　 　 　 　 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage Collector current Power dissipation VEBO IC ICP*1 PD*2 PD*3 6 V for 2 A 6 A 0.5 W 2.0 W Junction temperature Range of storage temperature Tj 150 Tstg -55 to +150 ed lElectrical characteristics (Ta = 25°C) d Parameter Symbol Conditions n s Collector-base breakdown e n voltage BVCBO IC = 50μA m ig Collector-emitter breakdown voltage BVCEO IC = 1mA Emitter-base breakdown voltage BVEBO IE = 50μA s Collector cut-off current ICBO VCB = 50V m e...