2SD2385
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2385
Power Amplifier Appli...
2SD2385
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2385
Power Amplifier Applications
Unit: mm
· High breakdown
voltage: VCEO = 140 V (min) · Complementary to 2SB1556
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating 140 140 5 8 0.1
120
150 −55 to 150
Equivalent Circuit
Unit V V V A A
W
°C °C
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
≈ 100 Ω
EMITTER
1 2003-02-04
2SD2385
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage
DC current gain
Collector-emitter saturation
voltage Base-emitter
voltage Transition frequency Collector output capacitance
ICBO
VCB = 140 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1) (Note)
VCE = 5 V, IC = 7 A
hFE (2) VCE (sat)
VBE fT Cob
VCE = 5 V, IC = 12 A IC = 7 A, IB = 7 mA VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
― ― 140
5000
2000 ― ― ― ―
Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000
Typ. Max Unit
― 5.0 µA
― 5.0 µA
――
V
― 30000 ―
――
― 2.5
V
― 3.0
V
30 ― MHz
110 ―
pF
Marking
TOSHIBA 2SD2385
JAPAN
hFE class...