2SD2384

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 6A ·Complement to Type 2SB1555 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2384 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2384 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 140 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 6mA 2.5 V VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 5V 3.0 V ICBO Collector Cutoff Current VCB= 140V ; IE=0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 μA hFE-1 DC Current Gain IC= 6A ; VCE= 5V 5000 30000 hFE-2 DC Current Gain IC= 10A ; VCE= 5V 2000 COB Output Capacitance IE=0 ; VCB= 10V;ftest= 1.0MHz 90 pF fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V 30 M...