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2SD2359 Datasheet

Part Number 2SD2359
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP Transistor
Datasheet 2SD2359 Datasheet2SD2359 Datasheet (PDF)

Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.5±0.1 4.5±0.1 1.6±0.2 s Features 2.6±0.1 0.4max. q q Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to em.

  2SD2359   2SD2359






Part Number 2SD2358
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2359 Datasheet2SD2358 Datasheet (PDF)

Transistors 2SD2358 Silicon NPN epitaxial planer type Unit: mm For low-frequency output amplification Complementary to 2SB1538 I Features • Low collector to emitter saturation voltage VCE(sat): < 0.15 V • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Colle.

  2SD2359   2SD2359







Part Number 2SD2357
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2359 Datasheet2SD2357 Datasheet (PDF)

Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q 1.0–0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute .

  2SD2359   2SD2359







Part Number 2SD2353
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon NPN transistor
Datasheet 2SD2359 Datasheet2SD2353 Datasheet (PDF)

2SD2353 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features ,VCESAT 。 High DC current gain ,low collector saturation voltage. / Applications 。 For power amplification. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SD2353 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Colle.

  2SD2359   2SD2359







Part Number 2SD2353
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2359 Datasheet2SD2353 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.4 V (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 6 Base current IB 0.6 A Collector power dissipation Ta = 25°.

  2SD2359   2SD2359







Silicon PNP Transistor

Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.5±0.1 4.5±0.1 1.6±0.2 s Features 2.6±0.1 0.4max. q q Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 3 2 1 (Ta=25˚C) Ratings 20 20 5 1.2 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter marking Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg EIAJ:SC–62 Mini Power Type Package Marking symbol : 1O Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 14V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 100mA IC = 500mA, IB = 10mA VCB = 6V, IE = –50mA, f = 200MHz VCB = 6V, IE = 0, f = 1MHz 20 20 .


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