2SD2352

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2352 Power Amplifier Applications 2SD2352 Unit: mm High DC current gain: hFE = 800 to 3200 Low collector saturation voltage: VCE (sat) = 0.3 V (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 2 A Pulse ICP 4 Base current IB 0.4 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2006-11-21 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltag...