2SD2280

Ordering number:EN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039A [2SB1507/2SD2280] ( ) : 2SB1507 Specifications E : Emitter C : Collector B : Base SANYO : TO-3PML Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A VCE=(–)5V, IC=(–)1A IC=(–)4A, IB=(–)0.4A Ratings (–)60 (–)50 (–)6 (–)7 (–)20 3.0 40 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 70* 30 10 max (–)0.1 (–)0.1 280* (–)0.4 Unit mA mA MHz V * : The 2SB1507/2SD2280 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 Any and all SANYO products described or contained herein do not have specifications that can handl...