Power Transistors
2SD2276
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to ...
Power Transistors
2SD2276
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1503
φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
20.0±0.5
s Features
q q q
6.0
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
(TC=25˚C)
Ratings 160 140 5 15 8 120 3.5 150 –55 to +150 Unit V V V A
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
1
2
3
A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP–3L Package
Internal Connection
C B
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 160V, IE = 0 VCE = 140V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 7A IC = 7A, IB = 7mA IC = 7A, IB = 7mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 7mA, IB2 = –7mA, VCC = 50V 20 2.0 6.0 1.2 140 2000 5000 30000 2.5 3.0 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA µA V
FE2
Rank classification
Q S P
Rank hFE2
5000 to 15000 7000 to 210...