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2SD2252 Datasheet

Part Number 2SD2252
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SD2252 Datasheet2SD2252 Datasheet (PDF)

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  2SD2252   2SD2252






Part Number 2SD2259
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2252 Datasheet2SD2259 Datasheet (PDF)

Transistor 2SD2259 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction te.

  2SD2252   2SD2252







Part Number 2SD2258
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2252 Datasheet2SD2258 Datasheet (PDF)

Transistor 2SD2258 (Tentative) Silicon NPN epitaxial planer type 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 For low-frequency output amplification 0.7 4.0 q q q Darlington connection. High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.45–0.05 +0.1 +0.1 2.5±0.5 1 2 2.5±0.5 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Coll.

  2SD2252   2SD2252







Part Number 2SD2257
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD2252 Datasheet2SD2257 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Complement to Type 2SB1495 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·Hammer drive, pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCE.

  2SD2252   2SD2252







Part Number 2SD2257
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD2252 Datasheet2SD2257 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2257 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1495 ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PA.

  2SD2252   2SD2252







Part Number 2SD2257
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2252 Datasheet2SD2257 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SD2257 Unit: mm • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25.

  2SD2252   2SD2252







NPN Triple Diffused Planar Silicon Transistor

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