2SD2248

2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) · Built-in zener diode between collector and base Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Ta = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 80 ± 10 80 ± 10 8 ±2 ±3 0.5 0.9 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit COLLECTOR BASE ≈ 5 kΩ ≈ 300 Ω EMITTER JEDEC TO-92M0D JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) 1 2003-02-04 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Transition frequency Collector output capacitance Unclamped inductive load energy Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) VCE (sat) VBE (sat) VECF fT Cob E S/B VCB = 60 V, IE = 0 VEB = 8 V, IC = 0 IC = 100 µA, IE = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB...