Transistor
2SD2216
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB1462
1.6±0.15
Unit:...
Transistor
2SD2216
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB1462
1.6±0.15
Unit: mm
s Features
q q q
0.4
0.8±0.1
0.4
0.2–0.05 0.15–0.05
+0.1
High foward current transfer ratio hFE. Low collector to emitter saturation
voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 60 50 7 200 100 125 125 –55 ~ +125 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector
EIAJ:SC–75 SS–Mini Type Package
Marking symbol : Y
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob
*
Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 IC = 10µA, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA VCE = 2V, IC = 100mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz
min
typ
0 to 0.1
0.2±0.1
max 0.1 100
+0.1
Unit µA...