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2SD2215A Datasheet

Part Number 2SD2215A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2215A Datasheet2SD2215A Datasheet (PDF)

Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type For power amplification 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2215 2SD2215A 2SD2215 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 10.0 –0. High collector to base voltage VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) 7.2±0.3 0.8±0.2 1..

  2SD2215A   2SD2215A






Part Number 2SD2215
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2215A Datasheet2SD2215 Datasheet (PDF)

Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type For power amplification 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2215 2SD2215A 2SD2215 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 10.0 –0. High collector to base voltage VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) 7.2±0.3 0.8±0.2 1..

  2SD2215A   2SD2215A







Silicon NPN Transistor

Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type For power amplification 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2215 2SD2215A 2SD2215 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 10.0 –0. High collector to base voltage VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) 7.2±0.3 0.8±0.2 1.1±0.1 1.0±0.2 +0.3 0.85±0.1 0.4±0.1 0.75±0.1 2.3±0.2 4.6±0.4 Ratings 350 400 250 300 5 1.5 0.75 15 1.3 150 –55 to +150 Unit V 1 2 3 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 emitter voltage 2SD2215A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V 3.0±0.2 10.2±0.3 7.2±0.3 A A W 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 ˚C ˚C 1 2 3 2.3±0.2 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2215 2SD2215A 2SD2215 2SD2215A 2SD2215 2SD2215A 4.6±0.4 (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC =.


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