2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features 1) High ...
2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features 1) High breakdown
voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. !External dimensions (Units : mm)
2SD2211
1.0
1.5 0.4
(1)
4.0 2.5 0.5
3.0
0.5
(3)
1.5 0.4
1.5
4.5
1.6
(2)
ROHM : MPT3 EIAJ : SC-62
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current 2SD1857A Collector power dissipation 2SD2211 2SD1918 Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits 160 160 5 1.5 3 1 2 1 10 150 −55 ∼+150 Unit
0.75
V V V A(DC) A(Pulse) W W W(Tc=25°C) °C °C
∗1 ∗2 ∗3
2SD1918
5.5 1.5
(3) (2) (1)
2.3
0.9
0.4
0.9
0.65 2.3
1.0 0.5
0.5
1.5 2.5 9.5
Junction temperature Storage temperature
2.3
0.8Min.
5.1 6.5
C0.5
∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. ∗ 3 When mounted on a 40 x 40 x 0.7mm ceramic board.
ROHM : CPT3 EIAJ : SC-63
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
2SD1857A
6.8 2.5
!Packaging specifications and hFE
0.65Max.
1.0
0.9
Type Package hFE Marking Code Basic ordering unit (pieces)
* Denotes hFE
2SD2211 MPT3 QR DQ* T100 1000
2SD1918 2SD1857A CPT3 Q − TL 2500 ATV PQ − TV2 2500
(1) (2) (3) 2.54 2.54
0.5
1.05
14.5
4.4
0.45...
