2SD2210

Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 2.6±0.1 0.4max. s Features q q q Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25˚C) Ratings 25 20 12 1 0.5 * 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 2 1 marking 1 150 –55 ~ +150 EIAJ:SC–62 Mini Power Type Package Marking symbol : IK Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 *3R on Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 0.5A, IB = 20...