2SD2206
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2206
Micro Motor Drive, Hammer D...
2SD2206
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2206
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation
voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
100 100
8 2 3 0.5 900 150 −55 to 150
V V V
A
A mW °C °C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1
http://store.iiic.cc/
2009-12-21
Electrical Characteristics (Ta ...