Transistor
2SD2179
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB1446
6....
Transistor
2SD2179
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB1446
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
0.7
4.0
s Features
q q q
0.65 max.
1.0 1.0
Low collector to emitter saturation
voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping.
0.2
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Ratings 50 50 5 7 5 1 150 –55 ~ +150 1cm2
Unit V V V A A W ˚C ˚C
1
2
3
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT2 Type Package
1.2±0.1 0.65 max.
0.1 0.45+ – 0.05
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
+0.1
s Absolute Maximum Ratings
0.45–0.05
+0.1
(Ta=25˚C)
2.5±0.5
2.5±0.5
(HW type)
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
*1
Conditions VC...