2SD2165

DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor. In addition, this transistor features a small resin-molded PACKAGE DRAWING (UNIT: mm) 10.0 ±0.3 4.5 ±0.2 φ 3.2 ±0.2 2.7 ±0.2 15.0 ±0.3 3 ±0.1 4 ±0.2 mounting cost reduction. FEATURES High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA) Mold package that does not require an insulating board or insulation bushing 2.54 TYP. 0.7 ±0.1 13.5 MIN. 12.0 ±0.2 insulation package, thus contributing to high-density mounting and 1.3 ±0.2 1.5 ±0.2 2.54 TYP. 2.5 ±0.1 0.65 ±0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation (TC = 25°C) Total power dissipation (TA = 25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT PT Tj Tstg Ratings 100 100 7.0 6.0 10 Note Unit 1 2 3 V V V A A A W W °C °C Electrode Connection 1. Base 2. Collector 3. Emitter 1.0 30 2.0 150 −55 to +150 Note PW ≤ 300 µs, duty...