2SD2151

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 A 30 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2151 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2151 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 1A 2.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 2V 45 ...