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2SD2141
NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2141 DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= 3A ·Low Collector-Emitter Saturation
Voltage
- : VCE(sat) = 1.5V(Max)@ IC= 4A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for...
INCHANGE
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2SD2141
Silicon NPN Transistor
- Sanken electric
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