Power Transistors
2SD2139
Silicon NPN triple diffusion planar type
For high-current amplification ratio, power amplific...
Power Transistors
2SD2139
Silicon NPN triple diffusion planar type
For high-current amplification ratio, power amplification
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q q
2.5±0.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C)
Ratings 80 60 6 6 3 1 15 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
90°
1.2±0.1
18.0±0.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
C1.0 2.25±0.2
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
0.55±0.1
C1.0
1 2 3
2.5±0.2
2.5±0.2
1:Base 2:Collector 3:Emitter MT4 Type Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage Forward current transfer ratio Collector to emitter saturation
voltage Transition frequency
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE fT
*
Conditions VCB = 80V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz
min
typ
max 100 100 100
Unit µA µA µA V
60 500 2500 1 50
VCE(sat)
V MHz
*h
FE
Rank classification
Q P O
Rank hFE
500 to 1000 800 to 1500 1200 to 2500
1
Power Transistors
PC — Ta
20 ...