2SD2107

2SD2107 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Rating 70 60 5 4 8 2 25 150 –55 to +150 Unit V V V A A W °C °C 2SD2107 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 70 60 5 — — 2 Typ — — — — — — — — — — Max — — — 10 10 200 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 50 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 60 V, IE = 0 VCE = 50 V, RBE = ∞ VCE = 4 V, IC = 1 A*1 VCE = 4 V, IC = 0.1 A*1 VCE = 4 V, IC = 1 A*1 I C = 2 A, IB = 0.2 A*1 I C = 2 A, IB = 0.2 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Base to emitter saturation voltage VBE VCE(sat) VBE(sat) 60 35 — — — 1.0 1.0 1.2 V V V Notes: 1. Pulse test. 2. The 2SD2107 is grouped by h FE1 as follows. B 60 to 120 C 100 to 200 Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 5 Collector current IC (A) 4 Typical Output Characteristics TC = 25°C 60 50 4...