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2SD2064 Datasheet

Part Number 2SD2064
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2064 Datasheet2SD2064 Datasheet (PDF)

Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm q q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 120 120 5 10 6 70 3 150 –55 t.

  2SD2064   2SD2064






Part Number 2SD2067
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2064 Datasheet2SD2067 Datasheet (PDF)

Transistor 2SD2067 (Tentative) Silicon NPN epitaxial planer type 6.9±0.1 1.05 2.5±0.1 ±0.05 Unit: mm (1.45) 0.8 0.5 4.5±0.1 For low-frequency output amplification 0.15 0.7 4.0 q q q q q Darlington connection. High foward current transfer ratio hFE. Large peak collector current ICP. High collector to emitter voltage VCEO. Allowing supply with the radial taping. 0.45–0.05 0.45–0.05 +0.1 +0.1 2.5±0.5 1 2 2.5±0.5 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collecto.

  2SD2064   2SD2064







Part Number 2SD2066
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD2064 Datasheet2SD2066 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2066 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·High transition frequency(fT) ·Wide area of satety operation ·Complement to Type 2SB1373 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Coll.

  2SD2064   2SD2064







Part Number 2SD2066
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD2064 Datasheet2SD2066 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2066 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1373 APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter.

  2SD2064   2SD2064







Part Number 2SD2065
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD2064 Datasheet2SD2065 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1372 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5.

  2SD2064   2SD2064







Part Number 2SD2065
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SD2064 Datasheet2SD2065 Datasheet (PDF)

Power Transistors 2SD2065 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1372 Unit: mm q q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 140 140.

  2SD2064   2SD2064







Silicon NPN Transistor

Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm q q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 120 120 5 10 6 70 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 0.7 s Features 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 120V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 4A VCE = 5V, IC = 4A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 80 20 60 20 1.8 2.0 V V MHz pF 200 min typ max 50 50 Unit µA µA Forward current transfer ratio Base to emitter voltage Collector to emitte.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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