SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2058
DESCRIPTION ·With TO-220F package ·...
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2058
DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation
voltage:
VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A ·Collector power dissipation:
PC=25W(TC=25 )
APPLICATIONS ·With general purpose applications
PINNING PIN 1 2 3
DESCRIPTION Base Collector Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base
voltage
VCEO
Collector-emitter
voltage
VEBO
Emitter-base
voltage
IC
Collector current
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS Open emitter Open base Open collector
Ta=25 TC=25
VALUE 60 60 7 3 0.5 1.5 25 150
-55~150
UNIT V V V A A
W
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown
voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation
voltage IC=2A ;IB=0.2A
VBE
Base-emitter on
voltage
IC=0.5A;VCE=5V
ICBO
Collector cut-off current
VCB=60V;IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A; IB1=-IB2=0.2A VCC=30V ,RL=15A
hFE Classifications
O
Y
G
60-120 100-200 150-300
Product S...