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2SD2019

Part Number	2SD2019
Manufacturer	Hitachi Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	2SD2019 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collect...
Datasheet	2SD2019 PDF File

Overview

2SD2019 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1.
Emitter 2.
Collector 3.
Base ID 15 kΩ (Typ) 0.
5 kΩ (Typ) 1 1 2 3 2SD2019 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 150 80 8 1.
5 3 10 150 –55 to +150 1.
5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 15...

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