Power Transistors
2SD2018
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
8.0+0.5 –0.1
Un...
Power Transistors
2SD2018
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
8.0+0.5 –0.1
Unit: mm
3.2±0.2
■ Features
High forward current transfer ratio hFE Built-in 60 V Zener diode between base to collector
φ 3.16±0.1
3.8±0.3 11.0±0.5
1.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Rating
25 60 + −10 +25 60 −10
Unit V V V A A W °C °C
B
1 2 3 0.75±0.1 4.6±0.2
5 1 1.5 1.2 5.0 150 −55 to +150
0.5±0.1 0.5±0.1 2.3±0.2 1.76±0.1
16.0±1.0
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
Internal Connection
C
Note) *: With a 100 mm × 100 mm × 2 mm Al heat sick.
R1
R2
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation
voltage Base-emitter saturation
voltage *
*
Symbol VCBO VCEO ICBO IEBO hFE VCE(sat) VBE(sat)
Conditions IC = 100 µA, IE = 0 IC = 1 mA, IB = 0 VCB = 25 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 1.0 A IC = 1.0 A, IB = 1.0 mA IC = 1.0 A, IB = 1.0 mA
Min 50 50
Typ
Max 85 85 1 2
3.05±0.1
Unit V V µA mA V V
6...
