2SD1994A

Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SB1322A I Features Low collector to emitter saturation voltage VCE(sat) Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 5 1.5 1 1 150 −55 to +150 Unit V V V A A W °C °C 1.2±0.1 0.65 max. 0.1 0.45+ − 0.05 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 2.5±0.1 I Absolute Maximum Ratings Ta = 25°C 1 2 3 0.45−0.05 +0.1 2.5±0.5 2.5±0.5 (HW Type) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency *1 Symbol ICBO VCBO VCEO ...