Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2...
Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1393 and 2SB1393A
s Features
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
q q q
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1985 2SD1985A 2SD1985 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 60 80 60 80 6 5 3 25 2 150 –55 to +150 Unit
14.0±0.5
emitter
voltage 2SD1985A Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
Solder Dip
4.0
V
16.7±0.3
7.5±0.2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation
voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SD1985 2SD1985A 2SD1985 2SD1985A 2SD1985 2SD1985A
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 5V, IC = 0.5A, f = 10MHz IC = 1A, IB...