2SD1978

2SD1978 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Complementary pair with 2SB1387 Outline TO-92MOD 2 3 ID 2 kΩ (Typ) 0.5 kΩ (Typ) 1 1. Emitter 2. Collector 3. Base 3 2 1 2SD1978 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VCEO VEBO IC ic (peak) PC Tj Tstg ID Ratings 120 120 7 1.5 3.0 0.9 150 –55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 2000 — — — — — Typ — — — — — — — — — — — Max — — — 1.0 10 30000 1.5 2.0 2.0 2.5 3.0 V V V V V Unit V V V µA µA Test conditions I C = 0.1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage hFE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 E to C diode forward voltage Note: 1. Pulse test VD 2 2SD1978 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) ...