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2SD1976 Datasheet

Part Number 2SD1976
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1976 Datasheet2SD1976 Datasheet (PDF)

2SD1976 Silicon NPN Triple Diffused Application High voltage switching, igniter Feature • Built-in High voltage zener diode (300 V) • High Speed switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1976 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Diode current Collector peak current Collector power dissipation Junction temperature Storag.

  2SD1976   2SD1976






Part Number 2SD1976
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1976 Datasheet2SD1976 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1976 DESCRIPTION ·Fast Switching Speed ·High DC Current Gain ·Built-in high voltage zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching ·Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Curren.

  2SD1976   2SD1976







Silicon NPN Transistor

2SD1976 Silicon NPN Triple Diffused Application High voltage switching, igniter Feature • Built-in High voltage zener diode (300 V) • High Speed switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1976 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Diode current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC ID* 1 Rating 300 300 7 6 6 10 40 150 –55 to +150 Unit V V V A A A W °C °C I C(peak) PC * Tj Tstg 1 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Emitter to collector diode forward voltage Turn on time Storage time Fall time Symbol V(BR)CBO VCEO(SUS) V(BR)EBO I CEO hFE VCE(sat) VBE(sat) VECF t on t stg tf Min 300 300 7 — 500 — — — — — — Typ — — — — — — — — 1.2 8.0 8.0 — Max 420 — — 100 — 1.5 2.0 3.5 — V V V µs Unit V V V µA Test conditions I C = 0.1 mA, IE = 0 I C = 3 A, RBE = ∞, L = 10 mH I E = 50 mA, IC = 0 VCE = 300 V, RBE = ∞ VCE = 2 V, IC = 4 A I C = 4 A, IB = 40 mA I C = 4 A, IB = 40 mA IF = 6 A I C = 4 A, VCC = 20 V I B1 = –IB2 = 40 mA 2 2SD1976 Maximum Collector Dissipation Curve.


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