2SD1964

Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit: mm 0.7±0.1 s Features q q q q 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 80 7 25 15 50 2 150 –55 to +150 Unit V V V A A W ˚C ˚C Solder Dip Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.0±0.5 4.0 s Absolute Maximum Ratings 16.7±0.3 7.5±0.2 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A VCE = 2V, IC = 8A IC = 7A, IB = 0.35A IC = 15A, IB = 1.5A IC = 7A, IB = 0.35A IC = 15A, IB = 1.5A VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 0.7A, IB2 = – 0.7A, VCC = 50V 20 0.5 2.0 0.2 80 45 90 30 0.5 1.5 1.5 2.5 V V V V MHz µs µs µs 260 min typ max 10 50...