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2SD1958

NPN Transistor

Description

isc Silicon NPN Power Transistor 2SD1958 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output high-current switching applications. ABSOLUTE MAX...

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