2SD1935 Datasheet PDF
Octopart Stock #: O-240488
Findchips Stock #: 240488-F
Ordering number:EN2516
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1295/2SD1935
Low-Frequency General-Purpose Amplifier Applications
Applications
· AF power amplifier, medium-speed switching, smallsized motor drivers.
Features
· Large current capacity. · Low collector to emitter saturation voltage. · Very small-sized package permitting sets t
More View
o be made
smaller and slimer.
Package Dimensions
unit:mm 2018A
[2SB1295/2SD1935]
( ) : 2SB1295
Specifications
C : Collector B : Base E : Emitter SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions
Ratings (–)15 (–)15 (–)5 (–)0.8 (–)3 200 150
–55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ max
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
ICBO IEBO hFE1
VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA
135*
(–)100 (–)100
900* (600)
hFE2 VCE=(–)2V, IC=(–)800mA
80
* : The 2SB1295/2SD1935 are classified by 50mA hFE as follows : 2SB1295 135 5 270 200 6 400 300 7 600
Marking: 2SB1295 : UL/2SD1935 : CT hFE rank: 2SB1295 : 5, 6, 7/2SD1935 : 5, 6, 7, 8
Unit V V V A A
mW ˚C ˚C
Unit
nA nA
2SB1935 135 5 270 200 6 400 300 7 600 450 8 900
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/4207TA, TS No.2516–1/4
Parameter Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage
2SB1295/2SD1935
Symbol
Conditions
fT VCE=(–)2V, IC=(–)50mA
Cob VCB=(–)10V, f=1MHz
VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)5mA, IB=(–)0.5mA IC=(–)400mA, IB=(–)20mA IC=(–)400mA, IB=(–)20mA IC=(–)10µA, I
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