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2SD1935 Datasheet PDF

Sanyo Semicon Device

Octopart Stock #: O-240488
Findchips Stock #: 240488-F



Part Number 2SD1935
Manufacturers Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
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Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications · AF power amplifier, medium-speed switching, smallsized motor drivers. Features · Large current capacity. · Low collector to emitter saturation voltage. · Very small-sized package permitting sets t
More View o be made smaller and slimer. Package Dimensions unit:mm 2018A [2SB1295/2SD1935] ( ) : 2SB1295 Specifications C : Collector B : Base E : Emitter SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)15 (–)15 (–)5 (–)0.8 (–)3 200 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA 135* (–)100 (–)100 900* (600) hFE2 VCE=(–)2V, IC=(–)800mA 80 * : The 2SB1295/2SD1935 are classified by 50mA hFE as follows : 2SB1295 135 5 270 200 6 400 300 7 600 Marking: 2SB1295 : UL/2SD1935 : CT hFE rank: 2SB1295 : 5, 6, 7/2SD1935 : 5, 6, 7, 8 Unit V V V A A mW ˚C ˚C Unit nA nA 2SB1935 135 5 270 200 6 400 300 7 600 450 8 900 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1598HA (KT)/4207TA, TS No.2516–1/4 Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage 2SB1295/2SD1935 Symbol Conditions fT VCE=(–)2V, IC=(–)50mA Cob VCB=(–)10V, f=1MHz VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)5mA, IB=(–)0.5mA IC=(–)400mA, IB=(–)20mA IC=(–)400mA, IB=(–)20mA IC=(–)10µA, I

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