2SD1898

2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Temperature * Single pulse Pw = 20ms Symbol Limits 100 80 5 1 2 0.5 150, -55 to +150 Unit VCBO VCEO VEBO IC I CP PC www.DataSheet4U.com Vdc Vdc Vdc A(DC) A (Pulse)* W Tj , Tstg C C unless otherwise noted ) ELECTRICAL CHARACTERISTICS (Ta=25% Parameter Symbol Collector-Base Breakdown Voltage(Ic=50uA, I E =0) Collector-Emitter Breakdown Voltage(Ic=1mA,I B=0 ) Emitter-Base Breakdown Voltage(I E =50uA, I C =0) Collector Cutoff Current(VCB=80V, I E =0) Emitter Cutoff Current(VEB=4V, IC =0) BV CBO BV CEO BVEBO ICBO IEBO Min Typ - Max - Unit 100 80 5 - V V V uA uA 1 1 WEITRON http://www.weitron.com.tw 2SD1898 C unless otherwise noted ) (Countinued) ELECTRICAL CHARACTERISTICS (Ta=25% Min Typ Max Unit Parameter Symbol DC Current Gain (VCE=3V, Ic=500mA) Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA) Transition Frequency (VCE=10V, Ic=50mA, f=100MHz) Output Capacitance (VCB=10V, I E =0A, f=1MHz) h FE V CE(sat) fT Cob 82 - 390 0.4 - - V MHz pF 100 20 CLASSIFICATION OF hFE Marking Rank Range P 82-180 DF Q 120-270 R 180-390 ELECTRICAL CHARACTERISTIC CURVES 1000 T a=25 °C C OLLE C TOR C UR R E NT : I C (mA) C OLLE C T OR C UR R E NT : I C ( A) T a=25 °C V C E =5V 1.0 0.8 0.6 0.4 6mA...