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2SD1888

Part Number	2SD1888
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Datasheet	2SD1888 PDF File

Features

isc Silicon NPN Darlington Power Transistor

2SD1888

DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1339 ·Minimum Lot-to-Lot variations for ro...

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