Power Transistor (50V, 3A)
2SD1864
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements...
Power Transistor (50V, 3A)
2SD1864
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243.
Structure Epitaxial planar type NPN silicon transistor
Dimensions (Unit : mm)
2SD1864
6.8±0.2
2.5±0.2
4.4±0.2
1.0 0.9
0.65Max.
14.5±0.5
0.5±0.1 (1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter (2) Collector (3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base
voltage
VCBO
60
V
Collector-emitter
voltage
VCEO
50
V
Emitter-base
voltage
VEBO
5
V
Collector current
3 A (DC) IC 4.5 A (Pulse) ∗1
Collector power dissipation
PC
1
W ∗2
Junction temperature
Tj 150 °C
Storage temperature
Tstg
−55 to +150
°C
∗1 Single pulse, PW=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown
voltage
BVCBO
Collector-emitter breakdown
voltage ...
