isc NPN Epitaxial Planar
Silicon Transistor
2SD1817
DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 60V(Min) ·Low Collector Saturation
Voltage-
: VCE(sat)= 1.5V(Max) @IC= 2.0A ·Minimum Lot-to-Lot variations for r...