SMD Type
Transistors
NPN Transistors 2SD1816
■ Features
● Low Collector-to-Emitter Saturation Voltage ● Fast Switchin...
SMD Type
Transistors
NPN Transistors 2SD1816
■ Features
● Low Collector-to-Emitter Saturation
Voltage ● Fast Switching Speed ● High fT. ● Complementary to 2SB1216
+9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1 -0.1
0.50 +0.8 -0.7
+1.50 0.15 -0.15
0.80+0.1 -0.1
0.127 m ax
+ 0.155 .5 5 -0.15
3.80
Unit: mm
+02.65 .25 -0.1
+00.50 .15 -0.15
+01.50 .28 -0.1
2.3 4 .60 +0.15
-0.15
0.60+ 0.1 - 0.1
1 Base 2 Collector 3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base
Voltage Collector - Emitter
Voltage Emitter - Base
Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg
Rating 120 100 6 4 8 1 150
-40 to 150
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown
voltage Collector- emitter breakdown
voltage Emitter - base breakdown
voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation
voltage Base - emitter saturation
voltage
DC current gain
Turn-on Time Storage Time Fall Time Collector output capacitance Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 100 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=2 A, IB=200mA
VBE(sat) IC=2 A, IB=200mA
hFE(1) VCE= 5V, IC= 500mA
hFE(2) VCE= 5V, IC= 3 A
ton
tstg See Test Circuit
tf
Cob VCB= 10V, IE= 0,f=1MHz
fT VCE= 10V, IC= 500 m...
