2SD1796

Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1796 60±10 60±10 6 4 0.5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD1796 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz 2SD1796 10max 10max 60±10 2000min 1.5max 60typ 45 typ V MHz pF 13.0min Equivalent circuit B C (3 k Ω)(1 5 0 Ω) E Application : Driver for Solenoid, Relay and Motor and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 10 IB2 (mA) –10 ton (µs) 1.0typ tstg (µs) 4.0typ tf (µs) 1.5typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 0m A 1.0m A 0 .8 m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =2V) 4 4 =2 IB Collector Current I C (A) 0. 5m A 2 Collector Current I C (A) 3 0 .6 m A 3 p) ase Tem 25˚C (C 4A 1 0.3mA 1 0 0 1 2 3 4 0 0.2 0.5 1 5 10 50 100 0 0 125˚C 1 1...