2SD1792

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1792 www.datasheet4u.com DESCRIPTION ·With ITO-220 package ·Switching power transistor ·DARLINGTON PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 200 7 7 10 0.5 1.0 30 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 4.16 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1792 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=3A; IB=5mA IC=3A; IB=5mA VCB=200V; IE=0 VCE=200V; IB=0 VEB=7V; IC=0 IC=3A ; VCE=3V IC=0.7A ; VCE=10V 1500 20 MIN TYP. MAX 1.5 2.0 0.1 0.1 5 30000 MHz UNIT V V mA mA mA SYMBOL VCEsat VBEsat ICBO ICEO IEBO hFE fT Switching times ton ts tf Turn-on time Storage time Fall time IC=3A;IB1=IB2=5mA, RL=10A VBB2=4V 2.0 12 5.0 µs µs µs 2 ...