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2SD1785

Sanken electric

Silicon NPN Transistor

Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1785 120 120 6 6(Pulse10) 1 30(...


Sanken electric

2SD1785

File Download Download 2SD1785 Datasheet


Description
Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1785 120 120 6 6(Pulse10) 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD1785 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=2A, IB=3mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz 2SD1785 10max 10max 120min 2000min 1.5max 100typ 70typ V MHz pF 13.0min Equivalent circuit B C (2.5k Ω)(200 Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –1.5 IB1 (mA) 3 IB2 (mA) –3 ton (µs) 0.5typ tstg (µs) 5.5typ tf (µs) 1.5typ 2.54 3.9 B C E ±0.2 I C – V CE Characteristics (Typical) A 5m A 3m A 2mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =2V) 8 8 A 20 1 0m m 1 .5 m A Collector Current I C (A) 0 .7 m A 2 Collector Current I C (A) 6 1mA 6 emp se T (Ca –30˚C Te 4 4 mp 0 .5 m ) (Cas e Te mp) A 5˚C 1 2A 4A (Ca 0 .4 m A I C =6 A se 2 2 I B =0.3mA 0 0 2 4 6 0 0.3 1 5 10 ...




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