Power Transistors
2SD1771, 2SD1771A
Silicon NPN triple diffusion planar type
For power amplification For TV vertical de...
Power Transistors
2SD1771, 2SD1771A
Silicon NPN triple diffusion planar type
For power amplification For TV vertical deflection output Complementary to 2SB1191 and 2SB1191A
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
10.0±0.3
s Features
2.0
1.5±0.1
1.5max.
1.1max.
q q q
High collector to emitter VCEO Large collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 200 200 150 180 6 2 1 25 1.3 150 –55 to +150 Unit
10.5min.
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1771 2SD1771A 2SD1771 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2
V
10.0±0.3
6.0±0.3
1.5–0.4
2.0
Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
A A
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
W
1 2 3
˚C ˚C
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SD1771 2SD1771A
(TC=25˚C)
Symbol ICBO IEBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT Cob
*
Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 5mA, IB = 0 IE = 0.5mA, IC = 0 VCE = 10V, IC = 100mA VCE = 10V, IC = 300mA VCE = 10V, IC = 300mA IC = 500mA, IB = 50mA VCE = 10V...
